Part number:
DG840
Manufacturer:
DGME
File Size:
739.64 KB
Description:
N-channel enhancement mode mosfet.
DG840
DGME
739.64 KB
N-channel enhancement mode mosfet.
📁 Related Datasheet
DG8040C - Fixed Inductors
(TOKO)
Fixed Inductors for Surface Mounting
DG8040C
Inductance Range: 1.0~100H
Remended patterns
(Unit: mm)
(Unit: mm)
FEATURES
Low Profile (H=.
DG808BC45 - Gate Turn-off Thyristor
(Dynex)
Replaces DS5914-2
DG808BC45
Gate Turn-off Thyristor
DS5914-3
November 2021 (LN41298)
FEATURES
KEY PARAMETERS
• Double Side Cooling • High Relia.
DG830 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG830
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG830N，， ，，，。 ，，。
DG830 is an N-channel enhancement mode MOSFET, which is pro.
DG858BW45 - Gate Turn-off Thyristor
(Dynex)
DG858BW45
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0 DS4096-4.0 January 2000
FEATURES
q q q q q q
Double Side Cooling.
DG858DW45 - Gate Turn-Off Thyristor
(Dynex)
Replaces DS4334-4
DG858DW45
Gate Turn-off Thyristor
DS4334-5
July 2014
(LN31737)
FEATURES
KEY PARAMETERS
Double Side Cooling High Reliabil.
DG884 - 8 x 4 Wideband Video Crosspoint Array
(Vishay Siliconix)
DG884
Vishay Siliconix
8 x 4 Wideband Video Crosspoint Array
FEATURES
Routes Any Input to Any Output Wide Bandwidth: 300 MHz Low Crosstalk: −85 dB @ .
DG8N60 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N60
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG8N60N，， ，，，。 ，，。
DG8N60 is an N-channel enhancement mode MOSFET, which is .
DG8N65 - N-CHANNEL ENHANCEMENT MODE MOSFET
(DGME)
DG8N65
N N-CHANNEL ENHANCEMENT MODE MOSFET
：V1.0
General Description
DG8N65N，， ，，，。 ，，。
DG8N65 is an N-channel enhancement mode MOSFET, which is .
