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SI2305CDS P-Channel MOSFET

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Description

P-Channel 8 V (D-S) MOSFET Si2305CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V -8 0.048 at VGS = - 2.5 V 0.0.

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* Load Switch for Portable Devices
* DC/DC Converter S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS -8 V VGS ±8 TC = 25 °C - 5.8 Continuous Drain Current (TJ = 1

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