Datasheet4U Logo Datasheet4U.com

SI3900DV Datasheet - Vishay Siliconix

SI3900DV Dual N-Channel 20-V (D-S) MOSFET

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.125 @ VGS = 4.5 V 0.200 @ VGS = 2.5 V ID (A) 2.4 1.8 D1 D2 TSOP-6 Top View G1 1 6 D1 3 mm S2 2 5 S1 G1 G2 G2 3 4 D2 2.85 mm S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Curre.

SI3900DV Datasheet (40.06 KB)

Preview of SI3900DV PDF
SI3900DV Datasheet Preview Page 2 SI3900DV Datasheet Preview Page 3

Datasheet Details

Part number:

SI3900DV

Manufacturer:

Vishay ↗ Siliconix

File Size:

40.06 KB

Description:

Dual n-channel 20-v (d-s) mosfet.

📁 Related Datasheet

SI3905DV Dual P-Channel 8-V (D-S) MOSFET (Vishay Siliconix)

SI3911DV Dual P-Channel 20-V (D-S) MOSFET (Vishay Siliconix)

SI3932DV Dual N-Channel MOSFET (Vishay Siliconix)

Si3933 3D low-frequency wake-up wireless receiver (CSM)

Si3993CDV Dual P-Channel 30 V (D-S) MOSFET (Vishay)

Si3993DV Dual P-Channel 30 V (D-S) MOSFET (Vishay)

SI3000 Voiceband Codec (Silicon Laboratories)

SI3008 V.22BIS ISOMODEM (Silicon Laboratories)

TAGS

SI3900DV Dual N-Channel 20-V D-S MOSFET Vishay Siliconix

SI3900DV Distributor