Click to expand full text
Si4500DY
New Product
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel 20
rDS(on) (W)
0.030 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.065 @ VGS = –4.5 V 0.100 @ VGS = –2.5 V
ID (A)
"7.0 "6.0 "4.5 "3.5
P-Channel
–20
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D D D D
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "12 "7.0 "5.5 "30 1.7 2.5 1.6
P-Channel
–20 "12 "4.5 "3.5 "20 –1.
SI4500DY Datasheet
