SIHG20N50C Datasheet, Mosfet, Vishay Siliconix

SIHG20N50C Features

• Mosfet
• Low figure-of-merit Ron x Qg
• 100 % avalanche tested
• High peak current capability
• dv/dt ruggedness
• Improved Trr/Qrr
• Improve

PDF File Details

Part number:

SIHG20N50C

Manufacturer:

Vishay ↗ Siliconix

File Size:

214.03kb

Download:

📄 Datasheet

Description:

Power mosfet.

TAGS

SIHG20N50C

Vishay Siliconix

📁 Related Datasheet

SIHG20N50C - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SIHG20N50C FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-.

SiHG20N50E - Power MOSFET (Vishay)
.vishay. SiHG20N50E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC.

SiHG21N60EF - Power MOSFET (Vishay)
.vishay. SiHG21N60EF Vishay Siliconix EF Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (.

SiHG21N65EF - Power MOSFET (Vishay)
.

SiHG21N80AEF - Power MOSFET (Vishay)
.vishay. SiHG21N80AEF Vishay Siliconix EF Series Power MOSFET With Fast Body Diode D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY V.

SIHG22N60AE - MOSFET (Vishay)
.vishay. SiHG22N60AE Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n.

SIHG22N60E - Power MOSFET (Vishay Siliconix)
.vishay. SiHG22N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC.

SIHG22N60S-E3 - (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET (Vishay Siliconix)
V i s h ay I n t e r t e c h n o l o g y, I n c . 600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:.

SIHG24N65E - Power MOSFET (Vishay Siliconix)
.vishay. SiHG24N65E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC.

SIHG24N65EF - Power MOSFET (Vishay)
.vishay. SiHG24N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °.