* Reduced figure-of-merit (FOM): Ron x Qg
* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Increased robustness due to low Qrr
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Avalanche
SIHG25N60EFL Datasheet (140.00 KB)
SIHG25N60EFL
140.00 KB
Mosfet.
www.vishay.com
SiHG25N60EFL
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode and Low Gate Charge
PRODUCT SUMMARY
VDS (V) at TJ max. RDS.
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