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SIHG22N60S-E3 (SIHG22N60S-E3 / SIHG47N60S-E3) Power MOSFET

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Description

V i s h ay I n t e r t e c h n o l o g y, I n c .600 V Power mosfets SiHG22N60S-E3 / SiHG47N60S-E3 m o sf e t s p r o d uc t o v e r v i e w http:.

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Features

* High E AR capability
* Improved RON x Qg figure of merit (FOM)
* 18.81 Ω-nC (SiHG22N60S-E3) ­ - SiHP22N60S-E3, SiHF22N60S-E3, and SiHB22N60S-E3 also available
* 15.12 Ω-nC (SiHG47N60S-E3)
* Ultra-low RDS(on)
* Ultra-low gate charge (Qg)

Applications

* PFC power supply stages
* Hard switching topologies
* Solar inverters
* UPS
* Motor control
* Lighting
* Server telecom These devices are produced using Vishay Super Junction technology, which has been tailored to minimize on-state res

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