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SiHG30N60E Datasheet - INCHANGE

SiHG30N60E N-Channel MOSFET

SiHG30N60E Features

* Drain Source Voltage- : VDSS= 600V(Min)

* Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATION

* Switch Mode Power Supplies

* Power Factor Correctio

SiHG30N60E Datasheet (333.96 KB)

Preview of SiHG30N60E PDF
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Datasheet Details

Part number:

SiHG30N60E

Manufacturer:

INCHANGE

File Size:

333.96 KB

Description:

N-channel mosfet.

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SiHG30N60E N-Channel MOSFET INCHANGE

SiHG30N60E Distributor