Datasheet Details
Part number:
SiHG30N60E
Manufacturer:
INCHANGE
File Size:
333.96 KB
Description:
N-Channel MOSFET
Features
* Drain Source Voltage- : VDSS= 600V(Min)
* Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* APPLICATION
* Switch Mode Power Supplies
* Power Factor Correctio
