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SiHG30N60E - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	SiHG30N60E
Manufacturer	INCHANGE
File Size	333.96 KB
Description	N-Channel MOSFET
Datasheet	SiHG30N60E-INCHANGE.pdf

SiHG30N60E Product details

Features

Drain Source Voltage- : VDSS= 600V(Min).
Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Nov 27, 2020 |