SiHG30N60E N-Channel MOSFET

INCHANGE

SiHG30N60E Description

isc N-Channel MOSFET Transistor *.

SiHG30N60E Features

* Drain Source Voltage- : VDSS= 600V(Min)
* Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SiHG30N60E Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number: SiHG30N60E
Manufacturer: INCHANGE
File Size: 333.96 KB
Datasheet: SiHG30N60E-INCHANGE.pdf
Description: N-Channel MOSFET

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N-Channel MOSFET INCHANGE

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