SiHB22N60E N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: SiHB22N60E
Manufacturer: INCHANGE
File Size: 253.62 KB
Datasheet: SiHB22N60E-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 21 13 56 PD Total Dissipation 227 Tj Operati

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SiHB22N60E N-Channel MOSFET INCHANGE

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