Datasheet Details
- Part number
- SiHB22N60E
- Manufacturer
- INCHANGE
- File Size
- 253.62 KB
- Datasheet
- SiHB22N60E-INCHANGE.pdf
- Description
- N-Channel MOSFET
SiHB22N60E Description
isc N-Channel MOSFET Transistor *.
SiHB22N60E Features
* With TO-263( D2PAK ) packaging
* High speed switching
* Low gate input resistance
* Standard level gate drive
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
SiHB22N60E Applications
* Power supply
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS ID IDM
Gate-Source Voltage Drain Current-Continuous;Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±20
21 13
56
PD
Total Dissipation
227
Tj
Operati
📁 Related Datasheet
📌 All Tags