SiHB20N50E
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E series power mosfet.
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VDS (V) at TJ max. RDS(on) max. at 25 °C (.
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VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (n.
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isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .
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VDS at TJ max. (V) RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.
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VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.
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