* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)
* Avalanche energy rated (UIS)
* Material categorization: for definitions of compliance please see www.vishay.com
SiHB22N65E Datasheet (207.22 KB)
SiHB22N65E
207.22 KB
Power mosfet.
www.vishay.com
SiHB22N65E
Vishay Siliconix
E Series Power MOSFET
D D2PAK (TO-263)
GD S
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V Qg t.
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