SiHD12N50E N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor SiHD12N50E *.

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Datasheet Specifications

Part number: SiHD12N50E
Manufacturer: INCHANGE
File Size: 257.78 KB
Datasheet: SiHD12N50E-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.5 6.6 21 PD Total Dissipation @TC=25℃ 114 Tch Max. Operatin

SiHD12N50E Distributors

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SiHD12N50E N-Channel MOSFET INCHANGE

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