Datasheet Details
- Part number
- SiHD12N50E
- Manufacturer
- INCHANGE
- File Size
- 257.78 KB
- Datasheet
- SiHD12N50E-INCHANGE.pdf
- Description
- N-Channel MOSFET
SiHD12N50E Description
Isc N-Channel MOSFET Transistor SiHD12N50E *.
SiHD12N50E Features
* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
SiHD12N50E Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
500
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
10.5 6.6
21
PD
Total Dissipation @TC=25℃
114
Tch
Max. Operatin
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