SiHA11N80E N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: SiHA11N80E
Manufacturer: INCHANGE
File Size: 196.19 KB
Datasheet: SiHA11N80E-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* With TO-220F package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications INCHANGE Semiconductor SiHA11N80E
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ Drain Current-Single Pulsed ±30 12 8 32 PD T

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SiHA11N80E N-Channel MOSFET INCHANGE

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