SiHFP350 Datasheet - INCHANGE

SiHFP350, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-247 packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 400 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 16 10 64 PD Total Dissipation 190 Tj Operating Junction Tempe

SiHFP350-INCHANGE.pdf