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SiHFP350 N-Channel MOSFET

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Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number
SiHFP350
Manufacturer
INCHANGE
File Size
256.32 KB
Datasheet
SiHFP350-INCHANGE.pdf
Description
N-Channel MOSFET

Features

* With TO-247 packaging
* With low gate drive requirements
* Easy to drive
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 400 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous @Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 16 10 64 PD Total Dissipation 190 Tj Operating Junction Tempe

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