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SiHFP360LC Power MOSFET

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Description

IRFP360LC, SiHFP360LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 110 Qgs (nC) 28 Qgd (nC) .
This new series of low charge Power MOSFETs achieve significantly lower gate charge over convertional MOSFETs.

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Features

* Ultra Low Gate Charge
* Reduced Gate Drive Requirement
* Enhanced 30 V VGS Rating
* Reduced Ciss, Coss, Crss
* Isolated Central Mounting Hole
* Dynamic dV/dt Rated
* Repetitive Avalanche Rated
* Compliant to RoHS Directive 2002/95/EC

Applications

* The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP360LCPbF SiHFP360LC-E3 IRFP360LC SiHFP360L

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