SiHFP350LC Power MOSFET

Vishay Siliconix

Description

IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Q.
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs.

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Datasheet Specifications

Part number: SiHFP350LC
Manufacturer: Vishay ↗ Siliconix
File Size: 1.30 MB
Datasheet: SiHFP350LC_VishaySiliconix.pdf
Description: Power MOSFET

Features

* Ultra Low Gate Charge
* Reduced Gate Drive Requirement
* Enhanced 30V VGS Rating
* Reduced Ciss, Coss, Crss
* Isolated Central Mounting Hole
* Dynamic dV/dt Rated
* Repetitive Avalanche Rated
* Compliant to RoHS Directive 2002/95/EC

Applications

* The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. TO-247AC IRFP350LCPbF SiHFP350LC-E3 IRFP350LC SiHFP350L

SiHFP350LC Distributors

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SiHFP350LC Power MOSFET Vishay Siliconix

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