SiHFP150 Power MOSFET

Vishay

Description

Power MOSFET IRFP150, SiHFP150 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFP150
Manufacturer: Vishay ↗
File Size: 1.15 MB
Datasheet: SiHFP150_Vishay.pdf
Description: Power MOSFET

Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC Available R

Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247AC IRFP150PbF

SiHFP150 Distributors

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SiHFP150 Power MOSFET Vishay

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