Datasheet4U Logo Datasheet4U.com

SiHFP044 Power MOSFET

SiHFP044 Description

Power MOSFET IRFP044, SiHFP044 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 9.
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHFP044 Features

* Dynamic dV/dt Rating
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS

SiHFP044 Applications

* where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Pa

📥 Download Datasheet

Preview of SiHFP044 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

Power MOSFET Vishay Siliconix
Vishay Siliconix SiHFP044-like datasheet