SIHFPF50 Datasheet - Vishay

SIHFPF50, Power MOSFET

IRFPF50, SiHFPF50 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 200 24 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

Features

* 900 1.6
* Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT TO-247AC

Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. G S D G S N-Channe

SIHFPF50-Vishay.pdf