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SiHFP9140 - Power MOSFET

SiHFP9140 Description

Power MOSFET IRFP9140, SiHFP9140 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) - 100 VGS = - 10 V 61 Qgs (nC) 14 Qgd (nC).
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHFP9140 Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* P-Channel
* Isolated Central Mounting Hole
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIA

SiHFP9140 Applications

* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP9140P

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