Datasheet Details
- Part number
- SiHFP350
- Manufacturer
- Vishay ↗ Siliconix
- File Size
- 1.26 MB
- Datasheet
- SiHFP350_VishaySiliconix.pdf
- Description
- Power MOSFET
SiHFP350 Description
Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.
SiHFP350 Features
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC
Available
RoHS
SiHFP350 Applications
* where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC IRFP350P
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