SiHFP360 Power MOSFET

Vishay Siliconix

Description

IRFP360, SiHFP360 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 30 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFP360
Manufacturer: Vishay ↗ Siliconix
File Size: 0.98 MB
Datasheet: SiHFP360_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 400 0.20
* Dynamic dV/dt Rated
* Repetitive Avalanche Rated
* Isolated Central Mounting Hole
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www. DataSheet4U. com TO-

Applications

* where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. G S D G S N-Channel

SiHFP360 Distributors

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SiHFP360 Power MOSFET Vishay Siliconix

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