* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated
SiHB21N65EF Datasheet (164.75 KB)
SiHB21N65EF
164.75 KB
Power mosfet.
www.vishay.com
SiHB21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °.
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