* Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM):
SiHG32N50D Datasheet (178.80 KB)
SiHG32N50D
178.80 KB
Power mosfet.
www.vishay.com
SiHG32N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC.
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