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SiHG32N50D Power MOSFET

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Description

www.vishay.com SiHG32N50D Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) max.at 25 °C () Qg max.(nC) Qgs (nC.

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Features

* Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)
* Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM):

Applications

* Consumer Electronics - Displays (LCD or Plasma TV
* Server and Telecom Power Supplies - SMPS
* Industrial - Welding, Induction Heating, Motor Drives
* Battery Chargers TO-247AC SiHG32N50D-E3 SiHG32N50D-GE3 ABSOLUTE MAXIM

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