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SIR870DP N-Channel MOSFET

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Description

N-Channel 100 V (D-S) MOSFET SiR870DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0060 at VGS = 10 V 100 0.0064 at VGS = 7.5 V 0.00.

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Features

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

Applications

* Fixed Telecom D
* DC/DC Converter
* Primary and Secondary Side Switch G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 60

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