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SIR876ADP N-Channel 100-V (D-S) MOSFET

SIR876ADP Description

New Product N-Channel 100 V (D-S) MOSFET SiR876ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) Max.0.0108 at VGS = 10 V 0.0114 at VG.

SIR876ADP Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested

SIR876ADP Applications

* DC/DC Primary Side Switch
* Telecom/Server 48 V, Full/Half-Bridge DC/DC
* Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain C

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Datasheet Details

Part number
SIR876ADP
Manufacturer
Vishay ↗
File Size
658.89 KB
Datasheet
SIR876ADP-Vishay.pdf
Description
N-Channel 100-V (D-S) MOSFET

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N-Channel 100-V D-S MOSFET Vishay
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