* 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 9.0 mW (IF = 50 mA). 3) Wide radiation angle θ = ±18_. 4) Emission spectrum well suited to silicon detectors (λP = 940 nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 7) Low cost, clear epoxy resin package. FA
SIR-320ST3F Datasheet (68.58 KB)
SIR-320ST3F
68.58 KB
Infrared light emitting diode.
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Infrared light emitting diode, top view type
SIR-320ST3F
The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. Thi.
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