* 1) Compact (φ3.1 mm). 2) High efficiency, high output PO = 8.0 mW (IF = 50 mA). 3) Wide radiation angle θ = 27_. 4) Emission spectrum well suited to silicon detectors (λP = 950 nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 7) Low cost, clear epoxy resin package. FAb
SIR-34ST3F Datasheet (54.29 KB)
SIR-34ST3F
54.29 KB
Infrared light emitting diode.
Sensors
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This .
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