* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Gen III Power MOSFET
* New MOSFET Technology Optimized for Ringing Reduction in Switching Application
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5
SIR164DP Datasheet (156.79 KB)
SIR164DP
156.79 KB
N-channel mosfet.
New Product
N-Channel 30-V (D-S) MOSFET
SiR164DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0025 at VGS = 10 V 30
0.0032 at VGS = 4.5.
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