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SIR172DP N-Channel MOSFET

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Description

N-Channel 30-V (D-S) MOSFET SiR172DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.0089 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a,.

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Datasheet Specifications

Part number
SIR172DP
Manufacturer
Vishay ↗
File Size
394.44 KB
Datasheet
SIR172DP-Vishay.pdf
Description
N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg and UIS Tested
* Compliant to RoHS

Applications

* Notebook CPU Core - High-Side Switch G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Curren

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