SIR172ADP N-Channel MOSFET

Vishay

Description

N-Channel 30 V (D-S) MOSFET SiR172ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max.30 0.0085 at VGS = 10 V 0.0105 at VGS = 4.5 V ID.

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Datasheet Specifications

Part number: SIR172ADP
Manufacturer: Vishay ↗
File Size: 324.40 KB
Datasheet: SIR172ADP-Vishay.pdf
Description: N-Channel MOSFET

Features

* TrenchFET® Power MOSFET
* Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile
* Optimized for High-Side Synchronous Rectifier Operation
* 100 % Rg and UIS Tested
* Material categorization: For definitions of compliance please see www. vishay. com

Applications

* Notebook CPU Core - High-Side Switch ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t =

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SIR172ADP N-Channel MOSFET Vishay

Vishay SIR172ADP-like datasheet