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SIR402DP N-Channel MOSFET

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Description

N-Channel 30-V (D-S) MOSFET SiR402DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.006 at VGS = 10 V 30 0.008 at VGS = 4.5 V PowerPAK S.

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

Applications

* Synchronous Rectification
* DC/DC Point-of-Load
* Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 2

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