SIR422DP N-Channel 40-V (D-S) MOSFET

Vishay

Description

N-Channel 40-V (D-S) MOSFET SiR422DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0066 at VGS = 10 V 40 0.008 at VGS = 4.5 V PowerPAK®.

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Datasheet Specifications

Part number: SIR422DP
Manufacturer: Vishay ↗
File Size: 324.23 KB
Datasheet: SIR422DP-Vishay.pdf
Description: N-Channel 40-V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested

Applications

* POL
* Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70

SIR422DP Distributors

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SIR422DP N-Channel 40-V D-S MOSFET Vishay

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