SIR416DP N-Channel 40-V (D-S) MOSFET

Vishay

Description

New Product N-Channel 40-V (D-S) MOSFET SiR416DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 40 0.0042 at VGS = 4.5.

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Datasheet Specifications

Part number: SIR416DP
Manufacturer: Vishay ↗
File Size: 307.23 KB
Datasheet: SIR416DP-Vishay.pdf
Description: N-Channel 40-V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested
* Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: SiR416DP-T1-GE3 (Lead (Pb)-free an

Applications

* POL
* Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage TC = 25 °C VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID

SIR416DP Distributors

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SIR416DP N-Channel 40-V D-S MOSFET Vishay

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