SIR418DP N-Channel 40-V (D-S) MOSFET

Vishay

Description

N-Channel 40-V (D-S) MOSFET SiR418DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.005 at VGS = 10 V 0.006 at VGS = 4.5 V ID (A)a 40.

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Datasheet Specifications

Part number: SIR418DP
Manufacturer: Vishay ↗
File Size: 107.14 KB
Datasheet: SIR418DP-Vishay.pdf
Description: N-Channel 40-V (D-S) MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* Qg Optimized
* 100 % Rg Tested
* 100 % UIS Tested
* Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm S 1S 5.15 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR418DP-

Applications

* DC/DC Conversion
* Industrial D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °

SIR418DP Distributors

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SIR418DP N-Channel 40-V D-S MOSFET Vishay

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