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SiHF9610 Power MOSFET

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Description

Power MOSFET IRF9610, SiHF9610 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 1.
The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors.

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Features

* Dynamic dV/dt Rating
* P-Channel
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Lead (Pb)-free Available Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL

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