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SiHF9630 Power MOSFET

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Description

www.vishay.com IRF9630, SiHF9630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) max.() Qg max.(nC) Qgs (nC) Qgd (nC) Configurati.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* Dynamic dV/dt rating
* Repetitive avalanche rated
* P-channel Available
* Fast switching Available
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www. vishay. com/do

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

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