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SiHF9530 Power MOSFET

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Description

IRF9530, SiHF9530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = - 10 V 38 6..
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Features

* - 100 0.30 www. DataSheet4U. com
* Dynamic dV/dt Rating Repetitive Avalanche Rated P-Channel 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available R

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. S G D D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF9530PbF SiHF9530-E3 IRF9530 SiHF9530 ABSO

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SiHF9530 Power MOSFET Vishay Siliconix
Vishay Siliconix SiHF9530-like datasheet
SiHF9510
SiHF9540
SiHF9540S
SiHF9610
SiHF9620