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SiHF9530S Power MOSFET

SiHF9530S Description

www.vishay.com IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET D2PAK (TO-263) S G GD S D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω.
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHF9530S Features

* Surface-mount
* Available in tape and reel
* Dynamic dV/dt rating
* Repetitive avalanche rated Available
* P-channel
* 175 °C operating temperature Available
* Fast switching
* Material categorization: for definitions of compl

SiHF9530S Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHF9530STRL-GE3 a IRF9530STRLPbF a D2PAK (TO-263) SiHF9530STRR-GE3 a IRF9530STRRPbF a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S

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