* 500 0.52
* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche Voltage and current
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www.DataSheet4U.c
SiHFB11N50A Datasheet (195.22 KB)
SiHFB11N50A
Vishay ↗ Siliconix
195.22 KB
Power mosfet.
IRFB11N50A, SiHFB11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 5.
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