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SiHFB11N50A Power MOSFET

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Description

IRFB11N50A, SiHFB11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 5.

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Features

* 500 0.52
* Low Gate Charge Qg Results in Simple Drive Requirement
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche Voltage and current
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www. DataSheet4U. c

Applications

* Switch Mode Power Supply (SMPS)
* Uninterruptible Power Supply
* High Speed Power Switching TO-220 G APPLICABLE OFF LINE SMPS TOPOLOGIES S G D S N-Channel MOSFET
* Two Transistor Forward
* Half and Full Bridge
* Power Factor Correction Boost ORD

SiHFB11N50A Distributors

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