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SiHFB16N50K Power MOSFET

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Description

IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = .

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Features

* Low Gate Charge Qg Results in Simple Drive Requirement Available
* Improved Gate, Avalanche and Dynamic dV/dt RoHS
* COMPLIANT Ruggedness
* Fully Characterized Capacitance and Avalanche Voltage and Current
* Low RDS(on)
* Lead (Pb)-free Available

Applications

* Switch Mode Power Supply (SMPS)
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits TO-220 IRFB16N50KPbF SiHFB16N50K-E3 IRFB16N50K SiHFB16N50K ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETE

SiHFB16N50K Distributors

📁 Related Datasheet

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📌 All Tags

SiHFB16N50K Power MOSFET Vishay Siliconix
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