SiHFBC30 Power MOSFET

Vishay Siliconix

Description

IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SiHFBC30
Manufacturer: Vishay ↗ Siliconix
File Size: 804.83 KB
Datasheet: SiHFBC30_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 600 2.2
* Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS

Applications

* at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRFBC30PbF SiHFBC30-E3 IRFBC30 SiH

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SiHFBC30 Power MOSFET Vishay Siliconix

Vishay Siliconix SiHFBC30-like datasheet