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SiHFBC30L Power MOSFET

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Description

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configura.
I2PAK (TO-262) D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination o.

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Features

* 600 2.2
* Surface Mount (IRFBC30S, SiHFBC30S)
* Low-Profile Through-Hole (IRFBC30L, SiHFBC30L)
* Available in Tape and Reel (IRFBC30S, SiHFBC30S)
* Dynamic dV/dt Rating
* 150 °C Operating Temperature
* Fast Switching
* Fully Avalanche Rated

Applications

* because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb Note a. See device orientation. D2PAK

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