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SiHFD210 Power MOSFET

SiHFD210 Description

IRFD210, SiHFD210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.8.
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

SiHFD210 Features

* 200 1.5 www. DataSheet4U. com
* Dynamic dV/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS

SiHFD210 Applications

* unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay pers

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