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SiHFD120 Power MOSFET

SiHFD120 Description

Power MOSFET IRFD120, SiHFD120 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

SiHFD120 Features

* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Compliant to RoHS Directive 2002/95/EC Available RoHS
* COMPLIANT

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Power MOSFET Vishay
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