SiHFD110 Datasheet - Vishay Siliconix

SiHFD110 Power MOSFET

G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in mul.

SiHFD110 Features

* 100 0.54

* Dynamic dV/dt Rating

* Repetitive Avalanche Rated

* For Automatic Insertion

* End Stackable

* 175 °C Operating Temperature

* Fast Switching and Ease of Paralleling

* Lead (Pb)-free Available Available RoHS

* COMPLIANT www.DataS

SiHFD110_VishaySiliconix.pdf