SiHFD123 Power MOSFET

Vishay Siliconix

Description

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 .
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

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Datasheet Specifications

Part number: SiHFD123
Manufacturer: Vishay ↗ Siliconix
File Size: 1.79 MB
Datasheet: SiHFD123_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 100 0.27
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www

Applications

* unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay pers

SiHFD123 Distributors

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SiHFD123 Power MOSFET Vishay Siliconix

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