SiHFD123 Datasheet - Vishay Siliconix

SiHFD123 Power MOSFET

G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in mult.

SiHFD123 Features

* 100 0.27

* Dynamic dV/dt Rating

* Repetitive Avalanche Rated

* For Automatic Insertion

* End Stackable

* 175 °C Operating Temperature

* Fast Switching

* Ease of Paralleling

* Lead (Pb)-free Available Available RoHS

* COMPLIANT www

SiHFD123_VishaySiliconix.pdf