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SiHFI614G

Power MOSFET

SiHFI614G Features

* 250 2.0

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Available RoHS

* COMPLIANT www.DataSheet4U.

SiHFI614G General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The mouldi.

SiHFI614G Datasheet (1.24 MB)

Preview of SiHFI614G PDF

Datasheet Details

Part number:

SiHFI614G

Manufacturer:

Vishay ↗ Siliconix

File Size:

1.24 MB

Description:

Power mosfet.
IRFI614G, SiHFI614G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.2 1.

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SiHFI614G Power MOSFET Vishay Siliconix

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