SIHFI530G Power MOSFET

Vishay

Description

Power MOSFET IRFI530G, SiHFI530G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 .
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan.

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Datasheet Specifications

Part number: SIHFI530G
Manufacturer: Vishay ↗
File Size: 667.12 KB
Datasheet: SIHFI530G-Vishay.pdf
Description: Power MOSFET

Features

* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Available RoHS

Applications

* The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single sc

SIHFI530G Distributors

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SIHFI530G Power MOSFET Vishay

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