SiHFI510G - Power MOSFET

Name: SiHFI510G
SKU: SiHFI510G-630653

Vishay Siliconix

📥 Download Datasheet

SiHFI510G Datasheet Preview — Preview of SiHFI510G PDF

Datasheet Details

Part number	SiHFI510G
Manufacturer	Vishay Siliconix
File Size	776.51 KB
Description	Power MOSFET
Datasheet	SiHFI510G_VishaySiliconix.pdf

SiHFI510G Product details

Description

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

100 0.54.
Isolated Package.
High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz).
Sink to Lead Creepage Distance = 4.8 mm.
175 °C Operating Temperature.
Dynamic dV/dt Rating.
Low Thermal Resistance.
Lead (Pb)-free Available Available RoHS.

📁 SiHFI510G Similar Datasheet

SIHFI530G - Power MOSFET (Vishay)
SiHFIB5N65A - Power MOSFET (Vishay)
SiHFIB6N60A - Power MOSFET (Vishay)
SiHFIBC40GLC - Power MOSFET (Vishay)
SiHF065N60E - Power MOSFET (Vishay)
SiHF074N65E - Power MOSFET (Vishay)
SIHF12N60E - Power MOSFET (Vishay)
SiHF15N60E - Power MOSFET (Vishay)

Other Datasheets by Vishay Siliconix

SiHFI520G - Power MOSFET
SiHFI540G - Power MOSFET
SiHFI614G - Power MOSFET
SiHFI620G - Power MOSFET
SiHFI624G - Power MOSFET
SiHFI630G - Power MOSFET

Published: Dec 8, 2008 |