SiHFI510G - Power MOSFET
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The mould
SiHFI510G Features
* 100 0.54
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Availab
