SiHFI510G Datasheet - Vishay Siliconix

SiHFI510G Power MOSFET

Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The mould.

SiHFI510G Features

* 100 0.54

* Isolated Package

* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

* Sink to Lead Creepage Distance = 4.8 mm

* 175 °C Operating Temperature

* Dynamic dV/dt Rating

* Low Thermal Resistance

* Lead (Pb)-free Available Availab

SiHFI510G_VishaySiliconix.pdf