SiHFI510G Power MOSFET

Vishay Siliconix

Description

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration www.DataSheet4U..
Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resista.

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Datasheet Specifications

Part number: SiHFI510G
Manufacturer: Vishay ↗ Siliconix
File Size: 776.51 KB
Datasheet: SiHFI510G_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 100 0.54
* Isolated Package
* High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
* Sink to Lead Creepage Distance = 4.8 mm
* 175 °C Operating Temperature
* Dynamic dV/dt Rating
* Low Thermal Resistance
* Lead (Pb)-free Available Availab

Applications

* The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single s

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SiHFI510G Power MOSFET Vishay Siliconix

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